reverse voltage

Surface mount switching diode . Reverse voltage 75 V. Rectified current 250 mA.

表面贴装开关二极管. 75五,反向电压整流电流250毫安.

The state-space equations have linear features, so use the superposition principle to see the voltage dip transient process as the two cases of the operational status of the steady state and reverse voltage.

该状态空间方程具有线性特性，因此可以利用叠加原理将电压跌落的瞬态过程看成是稳定运行状态和加反向电压的运行状态两种情况的叠加。

Surface mount rectifier. Max peak reverse voltage 50 V. Max average forward rectified current 3.0 A.

表面贴装整流器. 最大峰值反向电压50经常五,最大平均正向整流电流3.0答.

The high current, low voltage, reverse polarity, oxidative shielding gas, thick wire are the essential conditions of formation of the buried are, the high current being the most important factor.

大电流、低电压、粗焊丝、反极性和氧化性气氛是形成潜弧过程的必要条件，其中电流是最重要的条件。

The end electrical field distribution under polarity reverse test voltage of valve winding in converter transformer is calculated. The results are analyzed.

计算了换流变压器阀侧绕组在极性反转试验电压下端部电场的分布情况，并对计算结果进行了分析。

A phase shift converter can achieve zero voltage switching on the leading leg and zero current switching on the trailing leg by utilizing the reverse avalanche characteristics of IGBT. This circuit can provide low switching losses when IGBT is operating in high switching frequency.

利用IGBT的反向雪崩特性，实现伪相移变换器前臂零电压、尾臂零电流开关，使IGBT可在高开关频率下运行，且降低了开关损耗。

Superfast recovery rectifier. Max peak reverse voltage 300 V. Max average forward rectified current 1.0 A.

超快恢复整流. 最大峰值反向电压300经常五,最大平均正向整流电流1.0答.

Method: We exchange the conjunction sequence of three NO ( normal open) contacting points of radiograph high voltage preparing work relay& MAG SW-R with three reverse parallel connection of main thyristors.

方法：将摄影高压预上闸接触器MAG SW&R的3对常开触点与3组反向并联的主可控硅连接次序对调。

Small signal switching diode. Reverse voltage 50 V. Average rectified current 150 mA.

小信号开关二极管. 反向电压50伏平均整流电流150毫安.

Surface mount superfast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A.

表面安装超高速整流器. 经常性最大峰值反向电压400V.最大平均正向整流电流1.0A的.

Solid tantalum capacitors are polar capacitor. Reverse voltage is not permissible.

3固体钽电容器为极性电容器, 不适宜在加反向电压条件下使用.

Semiconductor junctions a reverse breakdown voltage at which a reverse-biased junction begins to conduct.

当反向偏 置 形成时,半导体的连接点会有反向击穿电压.